jan. 2000 preliminary notice: this is not a final specification. some parametric limits are subject to change. unit: w the seven circuits share the com and gnd. the diode, indicated with the dotted line, is parasitic, and cannot be used. input output gnd 2.7k 10k com 16p4(p) 16p2n-a(fp) 16p2s-a(gp) 16p2z-a(kp) package type in7 ? 7 10 in5 ? 5 12 input output in4 ? 4 13 inz3 ? 3 in2 ? 2 15 1 in1 ? 16 gnd ? com commom 9 8 in6 ? 611 ? o1 ? o2 ? o3 ? o4 ? o5 ? o6 ? o7 14 mitsubishi semiconductor M63813P/fp/gp/kp 7-unit 300ma transistor array with clamp diode collector-emitter voltage collector current input voltage clamping diode forward current clamping diode reverse voltage power dissipation operating temperature storage temperature pin configuration description M63813P/fp/gp/kp are seven-circuit single transistor ar- rays with clamping diodes. the circuits are made of npn transistors. both the semiconductor integrated circuits per- form high-current driving with extremely low input-current supply. features l four package configurations (p, fp, gp and kp) l medium breakdown voltage (bv ceo 3 35v) l synchronizing current (i c(max) = 300ma) l with clamping diodes l low output saturation voltage l wide operating temperature range (ta = C40 to +85 c) application driving of digit drives of indication elements (leds and lamps) with small signals function the M63813P/fp/gp/kp each have seven circuits consist- ing of npn transistor. a spike-killer clamping diode is pro- vided between each output pin (collector) and com pin (pin9). the transistor emitters are all connected to the gnd pin (pin 8). the transistors allow synchronous flow of 300ma collector current. a maximum of 35v voltage can be applied between the collector and emitter. circuit diagram v ma v ma v w c c C0.5 ~ +35 300 C0.5 ~ +35 300 35 1.47 1.00 0.80 0.78 C40 ~ +85 C55 ~ +125 ratings symbol parameter conditions unit absolute maximum ratings (unless otherwise noted, ta = C40 ~ +85 c) output, h current per circuit output, l v ceo i c v i i f v r p d t opr t stg ta = 25 c, when mounted on board M63813P m63813fp m63813gp m63813kp
jan. 2000 preliminary notice: this is not a final specification. some parametric limits are subject to change. ton toff 50% 50% 50% 50% input output (1)pulse generator (pg) characteristics : prr = 1khz, tw = 10 m s, tr = 6ns, tf = 6ns, zo = 50 w , v ih = 3v (2)input-output conditions : r l = 220 w , vo = 35v (3)electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes
jan. 2000 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductor M63813P/fp/gp/kp 7-unit 300ma transistor array with clamp diode typical characteristics 400 300 200 100 0 0 100 20 40 60 80 1 ~ 3 4 5 6 7 thermal derating factor characteristics ambient temperature ta ( c) power dissipation pd (w) input characteristics input voltage v i (v) input current i i (ma) duty cycle-collector characteristics (M63813P) duty cycle (%) collector current ic (ma) duty cycle-collector characteristics (M63813P) duty cycle (%) collector current ic (ma) duty cycle-collector characteristics (m63813fp) duty cycle (%) collector current ic (ma) duty cycle-collector characteristics (m63813fp) duty cycle (%) collector current ic (ma) 2.0 1.5 1.0 0.5 0 0 25 50 75 100 85 0 100 20 40 60 80 400 300 200 100 0 5 6 7 1 ~ 4 400 300 200 100 0 0 100 20 40 60 80 1 ~ 2 3 4 5 6 7 400 300 200 100 0 0 100 20 40 60 80 1 2 3 4 5 6 7 0.744 0.520 0.418 0.406 M63813P m63813fp m63813gp m63813kp 8 6 4 2 0 020 15 10 5 ta = 85 c ta = 25 c ta = ?0 c the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 25 c the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 85 c the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 25 c the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 85 c
jan. 2000 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductor M63813P/fp/gp/kp 7-unit 300ma transistor array with clamp diode duty cycle-collector characteristics (m63813gp/kp) duty cycle (%) collector current ic (ma) duty cycle-collector characteristics (m63813gp/kp) duty cycle (%) collector current ic (ma) output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) output saturation voltage collector current characteristics output saturation voltage v ce(sat) (v) collector current ic (ma) dc amplification factor collector current characteristics collector current ic (ma) dc amplification factor h fe 400 300 200 100 0 0 100 20 40 60 80 1 ~ 2 4 5 6 7 3 400 300 200 100 0 0 100 20 40 60 80 1 2 3 4 5 6 7 250 200 150 100 50 0 0 0.2 0.4 0.6 0.8 100 80 60 40 20 0 0 0.05 0.10 0.15 0.20 100 80 60 40 20 0 0 0.05 0.10 0.15 0.20 10 0 10 1 10 2 10 1 10 2 10 3 23 57 23 57 2 3 5 7 2 3 5 7 10 3 23 57 the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 25 c the collector current values represent the current per circuit. repeated frequency 3 10hz the value the circle represents the value of the simultaneously-operated circuit. ta = 85 c i b = 3ma ta = 25 c i b = 2ma i b = 1.5ma i b = 1ma i b = 0.5ma ta = 25 c v i = 7v v i = 6v v i = 5v v i = 4v v i = 3v v i = 2v i i = 2ma ta = ?0 c ta = 25 c ta = 85 c v ce 10v ta = 25 c
jan. 2000 preliminary notice: this is not a final specification. some parametric limits are subject to change. mitsubishi semiconductor M63813P/fp/gp/kp 7-unit 300ma transistor array with clamp diode grounded emitter transfer characteristics input voltage v i (v) collector current ic (ma) grounded emitter transfer characteristics input voltage v i (v) collector current ic (ma) clamping diode characteristics forward bias voltage v f (v) forward bisa current i f (ma) 50 40 30 20 10 0 250 200 150 100 50 0 250 200 150 100 50 0 0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 1.6 2.0 ta = 25 c ta = 85 c ta = ?0 c 01234 5 v ce = 4v ta = 85 c ta = 25 c ta = ?0 c ta = 85 c ta = 25 c ta = ?0 c v ce = 4v
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